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  hexfet ? power mosfet pd - 95200 fifth generation hexfets from international rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. this benefit, combined with the fast switching speed and ruggedized device design that hexfet power mosfets are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. the so-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. with these improvements, multiple devices can be used in an application with dramatically reduced board space. the package is designed for vapor phase, infra red, or wave soldering techniques. power dissipation of greater than 0.8w is possible in a typical pcb mount application.  description  generation v technology  ultra low on-resistance  dual p-channel mosfet  surface mount  available in tape & reel  dynamic dv/dt rating  fast switching so-8 v dss = -55v r ds(on) = 0.105 ? IRF7342PBF www.irf.com 1 parameter max. units v ds drain- source voltage -55 v i d @ t c = 25c continuous drain current, v gs @ 10v -3.4 i d @ t c = 70c continuous drain current, v gs @ 10v -2.7 a i dm pulsed drain current  -27 p d @t c = 25c power dissipation 2.0 p d @t c = 70c power dissipation 1.3 linear derating factor 0.016 w/c v gs gate-to-source voltage 20 v v gsm gate-to-source voltage single pulse tp<10s 30 v e as single pulse avalanche energy  114 dv/dt peak diode recovery dv/dt  5.0 v/ns t j, t stg junction and storage temperature range -55 to + 150 c parameter typ. max. units r ja maximum junction-to-ambient  ??? 62.5 c/w thermal resistance absolute maximum ratings  d1 d1 d2 d2 g1 s2 g2 s1 top view 8 1 2 3 4 5 6 7  lead-free
IRF7342PBF 2 www.irf.com parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage -55 ??? ??? v v gs = 0v, i d = -250a ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? -0.054 ??? v/c reference to 25c, i d = -1ma ??? 0.095 0.105 v gs = -10v, i d = -3.4a   ??? 0.150 0.170 v gs = -4.5v, i d = -2.7a   v gs(th) gate threshold voltage -1.0 ??? ??? v v ds = v gs , i d = -250a g fs forward transconductance 3.3 ??? ??? s v ds = -10v, i d = -3.1a ??? ??? -2.0 v ds = -55v, v gs = 0v ??? ??? -25 v ds = -55v, v gs = 0v, t j = 55c gate-to-source forward leakage ??? ??? -100 v gs = -20v gate-to-source reverse leakage ??? ??? 100 v gs = 20v q g total gate charge ??? 26 38 i d = -3.1a q gs gate-to-source charge ??? 3.0 4.5 nc v ds = -44v q gd gate-to-drain ("miller") charge ??? 8.4 13 v gs = -10v, see fig. 10  t d(on) turn-on delay time ??? 14 22 v dd = -28v t r rise time ??? 10 15 i d = -1.0a t d(off) turn-off delay time ??? 43 64 r g = 6.0 ? t f fall time ??? 22 32 r d = 16 ? ,  c iss input capacitance ??? 690 ??? v gs = 0v c oss output capacitance ??? 210 ??? pf v ds = -25v c rss reverse transfer capacitance ??? 86 ??? ? = 1.0mhz, see fig. 9 electrical characteristics @ t j = 25c (unless otherwise specified)  
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 parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) showing the i sm pulsed source current integral reverse (body diode)  p-n junction diode. v sd diode forward voltage ??? ??? -1.2 v t j = 25c, i s = -2.0a, v gs = 0v  t rr reverse recovery time ??? 54 80 ns t j = 25c, i f = -2.0a q rr reverse recoverycharge ??? 85 130 nc di/dt = -100a/s  source-drain ratings and characteristics       
s d g   repetitive rating; pulse width limited by max. junction temperature. ( see fig. 11 )  i sd  -3.4a, di/dt  -150a/s, v dd   v (br)dss , t j  150c notes:  starting t j = 25c, l = 20mh r g = 25 ? , i as = -3.4a. (see figure 8)  pulse width 300s; duty cycle  2%.  when mounted on 1 inch square copper board, t<10 sec
IRF7342PBF www.irf.com 3 0.1 1 10 100 0.1 1 10 100 20s pulse width t = 25 c j top bottom vgs -15v -12v -10v -8.0v -6.0v -4.0v -3.5v -3.0v -v , drain-to-source voltage (v) -i , drain-to-source current (a) ds d -3.0v   
                   
    0.1 1 10 100 0.1 1 10 100 20s pulse width t = 150 c j top bottom vgs -15v -12v -10v -8.0v -6.0v -4.0v -3.5v -3.0v -v , drain-to-source voltage (v) -i , drain-to-source current (a) ds d -3.0v 1 10 100 3 4 5 6 7 v = -25v 20s pulse width ds -v , gate-to-source voltage (v) -i , drain-to-source current (a) gs d t = 25 c j t = 150 c j 0.1 1 10 100 0.2 0.4 0.6 0.8 1.0 1.2 1.4 -v ,source-to-drain voltage (v) -i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j  
IRF7342PBF 4 www.irf.com 
   
  
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  &  0 2 4 6 8 10 12 0.080 0.120 0.160 0.200 0.240 r , drain-to-source on resistance -i , drain current (a) d ds (on) vgs = -4.5v vgs = -10v ! ? " -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d -10v -3.4 a 25 50 75 100 125 150 0 50 100 150 200 250 300 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom -1.5a -2.7a -3.4a  #                   ( ? ) 0.05 0.15 0.25 0.35 0.45 2581114 a gs -v , gate-to-source voltage (v) i = -3.4 a d
IRF7342PBF www.irf.com 5 0 10 20 30 40 0 4 8 12 16 20 q , total gate charge (nc) -v , gate-to-source voltage (v) g gs i = d -3.1a v = -12v ds v = -30v ds v = -48v ds  &    &     
   
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  0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10 100 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) 1 10 100 0 240 480 720 960 1200 -v , drain-to-source voltage (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss gs gd , ds rss gd oss ds gd c iss c oss c rss
IRF7342PBF 6 www.irf.com so-8 package outline dimensions are shown in milimeters (inches) e1 d e y b a a1 h k l .189 .1497 0 .013 .050 basic .0532 .0040 .2284 .0099 .016 .1968 .1574 8 .020 .0688 .0098 .2440 .0196 .050 4.80 3.80 0.33 1.35 0.10 5.80 0.25 0.40 0 1.27 b as ic 5.00 4.00 0.51 1.75 0.25 6.20 0.50 1.27 mi n max millimeters inches mi n max dim 8 e c .0075 .0098 0.19 0.25 .025 basic 0.635 bas ic 87 5 65 d b e a e 6x h 0.25 [.010] a 6 7 k x 45 8x l 8x c y 0.25 [.010] c a b e1 a a1 8x b c 0.10 [.004] 4 3 12 f oot p r i nt 8x 0.72 [.028] 6.46 [.255] 3x 1.27 [.050] 4. ou t l i ne conf or ms t o j e de c ou t l i ne ms -012aa. not e s : 1. dimens ioning & t olerancing pe r as me y14.5m-1994. 2. cont roll ing dime ns ion: mil lime te r 3. di me ns i ons ar e s h own i n mi l l i me t e r s [i nch e s ] . 5 dimens ion doe s not incl ude mol d prot rus ions . 6 dimens ion doe s not incl ude mol d prot rus ions . mold prot rus ions not t o e xce e d 0.25 [.010]. 7 dimens ion is t he le ngt h of l e ad f or s ol dering t o a s ubs t rat e. mold prot rus ions not t o e xce e d 0.15 [.006]. 8x 1.78 [.070] so-8 part marking information (lead-free) dat e code (yww) xxxx int ernat ional rect ifier logo f 7101 y = l as t digit of t he ye ar part number lot code ww = we e k e xample: t his is an irf7101 (mos fe t ) p = de s i gnat e s l e ad-f r e e product (optional) a = as s e mb l y s i t e code
IRF7342PBF www.irf.com 7 330.00 (12.992) max. 14.40 ( .566 ) 12.40 ( .488 ) notes : 1. controlling dimension : millimeter. 2. outline conforms to eia-481 & eia-541. feed direction terminal number 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) notes: 1. controlling dimension : millimeter. 2. all dimensions are shown in millimeters(inches). 3. outline conforms to eia-481 & eia-541. so-8 tape and reel dimensions are shown in milimeters (inches) data and specifications subject to change without notice. this product has been designed and qualified for the consumer market. qualifications standards can be found on ir?s web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 10/04


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